IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability. When designing IGBT or SiC FET bridge circuits, proper design of the gate drive circuitry is at least as important as transistor selection to ensure high reliability  Concern for the environment is a major … Read more

Dual N-channel JFET lowers noise in precision instrumentation and sensors

The LS844 monolithic dual N-channel JFET from Linear Systems provides low input capacitance, substantially reducing intermodulation distortion. Targeting precision instrumentation and sensor applications, the LS844 offers a combination of high transconductance, low noise of 2.5 nV/√Hz typical at 1 kHz, and low input capacitance of just 3 pF typical and 8 pF maximum. Constructed by … Read more

650V GaN FET resides in surface-mount package

Extending Transphorm’s SuperGaN FET portfolio to higher power systems, the TP65H050G4BS is a 650-V, 50-mΩ device housed in a TO-263 (D2PAK) package. Engineers can use the TP65H050G4BS where higher power and surface-mount packaging are required, enabling better thermal performance than PQFN type packages. It also increases the efficiency of PCB assembly through the use of … Read more

The start-up transistor works once!

It’s the mid 1990’s and I am a design engineer for a company that designs and manufactures custom measurement systems and high power electronics. Our customers range from experimental fusion reactor operators to electric utilities. One day my boss tells me to join him in the conference room to meet with some people from a … Read more

Selecting the Proper Operation of Switching Power Transistors

With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the choice of the optimum switching transistor is difficult. With 3 materials and about 8 types of transistors to select from – although not all combinations are available – the choice of the optimum switching … Read more

GaN controller ICs optimize charger designs

Three GaN primary-side flyback controllers from startup Elevation Semiconductor enable efficient and compact 20-W to 65-W battery charger solutions. The HL9550, HL9552, and HL9554 each integrate a 650-V GaN power FET and offer wide VDD operating ranges up to 80 V without an additional clamp circuit for USB PD applications. Intended for switched-mode power supplies, … Read more

SiC MOSFET Intelligent Power Modules for E-mobility

An increasing number of leading electric car manufacturers are moving to Silicon Carbide (SiC) Power Transistors for traction inverters, with some relying on unconventional discrete packaging. However, very few SiC-based power modules optimized for electrical motor drive are available today. Moreover, integrating a fast switching SiC power module into an optimized inverter including gate drivers, … Read more

Selection and Proper Operation of Switching Power Transistors: Part 2

With 3 materials and about 8 types of transistors to select from — although not all combinations are available — the choice of the optimum switching transistor is difficult. In the first article of this series, we discussed the main requirements for power transistors, Si power bipolars, the structure and breakdown of standard Si MOSFET power … Read more

ST bolsters GaN power SIP family

Two devices join ST’s MasterGaN portfolio of integrated GaN transistor/driver power packages for applications up to 45 W and 150 W. The MasterGaN3 and MasterGaN5 power system-in-package (SIP) devices each pack a 600-V half-bridge gate driver with two 650-V enhancement-mode GaN HEMTs, along with associated safety and protection circuitry. According to the manufacturer, these GaN-based … Read more

Gate driver affords design adaptability

A 600-V half-bridge gate driver, the STDriveg600 from STMicroelectronics, is capable of driving GaN or silicon transistors. The part offers high current output and short propagation delay of 45 ns, tightly matched between high-side and low-side outputs. The STDriveg600 drives N-channel silicon MOSFETs at up to 20 V and also allows the flexibility to apply … Read more