Retrofit of a Superstar for More Sustainability and Performance: The EconoDUAL 3 Black Series

The Infineon EconoDUAL™ 3 (ED3) has been in use since 2005 in key applications such as general-purpose drives (GPD), electric buses and trucks, solar and wind systems, uninterruptible power supplies (UPS), chargers, and traction. It is available today with a variety of IGBT technologies and topologies as well as with integrated shunts. After 15 years, … Read more

IGBT/SiC-FET Driver Design Tips to Prevent False Triggering

This article discusses tips on properly designing IGBT or SiC FET bridge circuits to prevent false triggering and ensure high reliability. When designing IGBT or SiC FET bridge circuits, proper design of the gate drive circuitry is at least as important as transistor selection to ensure high reliability  Concern for the environment is a major … Read more

New Gen 3 650V IGBT A Soft and Efficient Switch for Industrial Applications

This article discusses the technological improvement that is presented by Gen 3 IGBTS from Rohm Semiconductor to be used for many industrial applications. Recent developments of trench stop IGBTs has led to very high performance devices. However, high performance comes together with some challenges related to the occasional snappy behavior of the device. The new … Read more

High Efficiency IGBT M7 Chip Technology utilized in the Mid Power Package VINco E3

This article highlights Vincotech M7 chip and the SLC package technology utilized by VINco E3 product line for an efficient and reliable mid-power package. Power semiconductors are the core components of any energy conversion system and are essential for the efficient utilization of energy. Achieving minimum power loss is one of the most critical goals … Read more

Reverse Conducting IGCT Platform optimized for Modular Multilevel Converters MMC

This article discusses the technical aspects of ABB’s newly developed Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) platform. ABB has developed a new Reverse Conducting Integrated Gate Commutated Thyristor (RC-IGCT) platform and recently the first products such as the 4.5kV / 3kA and a 6.5kV / 2.15kA RC-IGCT have reached the production stage. The development … Read more

Enhanced Trench 3300V TSPT+ IGBT Module Brings Highest Current Density and Robustness

This article discusses the Enhanced Trench cell or TSPT+ technology and its features and advantages. With the arrival of the Enhanced Planar (SPT+) IGBT cell technology, ABB set a benchmark in device performance that still today competes with Trench cell IGBTs. Nevertheless, the market continuously demands increased performance. ABB has thus combined the merits of … Read more

Driving SiC MOSFETs with a HighSpeed Gate Driver IC

Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative voltage Silicon-Carbide (SiC) MOSFETs that become a visible part of the MOSFET market require special gate drivers that are able to provide a negative voltage to the gate in a MOSFETs off state, high charge/discharge pulse current, and … Read more

Side Wall Gate – Moving on from Trench

This article discusses the new side wall gate structure and its performance characteristics and its module-level investigation. A new Side Wall Gate Structure Shows Inspiring Performance Characteristics, Breaking Through the Trench Gate Ceiling. HITACHI Bridges the Performance Gap Between Silicon and Wide Band Gap Devices. It is not news that the IGBT remains the backbone … Read more

The Challenges of Using SiC MOSFETBased Power Modules for Solar Inverters

This article discusses silicon carbide (SiC), a semiconductor material for efficient semiconductor devices. It is used in SiC MOSFET-based power modules and standard power supply. This article examines SiC MOSFETs as a viable option for meeting the rising demand for faster switching and greater efficiency in 1500 V solar applications. It looks at their benefits … Read more