High frequency, high density power supplies are possible with gallium nitride (GaN) devices, which are ideal for aerospace, transportation, and medical applications. Certain design procedures must be taken into account when laying out the printed circuit board (PCB) and components. A multi-layer layout and tracing with copper pores, for example, would minimize the conduction path … Read more
In recent years, the space market has shifted toward more efficient power solutions by using previously unknown technology in space systems. Because space hardware is subjected to extreme environmental conditions, including ionizing radiation, radiation-resistant components are required. Radiation-tolerant power MOSFETs have been available for some years, but they have compromised electrical performance to attain high … Read more
The huge, constantly expanding number of servers in data centers, each with central processing units (CPUs), graphics processing units (GPUs), and memory capable of storing massive amounts of data, necessitates increased power. To support this expansion, smaller, lighter, and more efficient power supply units, or PSUs, are required. The latest advances in PSUs take advantage of … Read more
This article highlights Navitas Semiconductor GaN Power ICs history with power electronics technology development and advantages brought by GaN devices. Forty years ago, in 1977, two major events changed the lives of many engineers: the movie “Star Wars” was released, and there was a revolution in power electronics. By 2017, we have had many Star … Read more
This year’s PowerUP Expo Virtual Conference has seen many speakers talking about wide-bandgap (WBG) semiconductors, energy trends, and low-power aspects. Efficiency is a driving force in all industrial sectors, including consumer. Thanks to their savings in size, weight, and cost, as well as higher efficiency, gallium nitride and silicon carbide power devices are making major … Read more
Extending Transphorm’s SuperGaN FET portfolio to higher power systems, the TP65H050G4BS is a 650-V, 50-mΩ device housed in a TO-263 (D2PAK) package. Engineers can use the TP65H050G4BS where higher power and surface-mount packaging are required, enabling better thermal performance than PQFN type packages. It also increases the efficiency of PCB assembly through the use of … Read more
This article highlights InRel-NPower exploration of the latest GaN, AlGaN, and AlN semiconductor materials for power electronics applications. The InRel-NPower research project reaches for maximum power efficiencies in power electronics’ applications by exploring group III Nitride-basing power devices. Power electronics demands the highest efficiency for converter and inverter applications. Continuous innovation requires the exploration of … Read more
This article describes a method for simulating conducted EMI in switching power converters highlighting LISN model development and EMI signature extraction. Simulation of electromagnetic interference (EMI) eliminates the ‘black magic’ of EMI design, enables increased power density with filter optimization, and reduces the risk of product delays. This article shares a methodology for model development … Read more
This article highlights Transphorm Incorporated TPH3205WSQA device field reliability data for high voltage GaN power converters applications. Transphorm has created an extensive body of reliability data across multiple generations of products that demonstrate the robustness of the platform; by extensive qualification testing and by having an in-depth understanding of failure modes and acceleration factors. FIT … Read more
The International Conference on Integrated Power Electronics Systems (CIPS) focuses on the technological background, starting with the components to be integrated (such as passives and sensors), but with the largest share in the conference addressing power semiconductor chips made out of silicon (Si), or more increasingly, wide bandgap materials like silicon carbide (SiC) and gallium … Read more
